PART |
Description |
Maker |
PD46364185BF1-E40-EQ1 PD46364365BF1-E40-EQ1 PD4636 |
36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
UPD44325092BF5-E33-FQ1 PD44325092B-15 |
4M X 9 QDR SRAM, 0.45 ns, PBGA165 36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
UPD44164082F5-E50-EQ1 UPD44164362F5-E50-EQ1 UPD441 |
18M-BIT DDRII SRAM 2-WORD BURST OPERATION 1800万位的SRAM 2条DDRII字爆发运 2M X 8 DDR SRAM, 0.45 ns, PBGA165
|
NEC, Corp.
|
K7I161882B-FC16 K7I161882B-FC20 K7I161882B-FC25 K7 |
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM 512Kx36位,1Mx18位首席信息官b2DDRII的SRAM GT 35C 35#16 PIN PLUG RTANG
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
UPD44324092BF5-E33-FQ1 UPD44324182BF5-E33-FQ1 PD44 |
4M X 9 DDR SRAM, 0.45 ns, PBGA165 2M X 18 DDR SRAM, 0.45 ns, PBGA165 36M-BIT DDR II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
MCM69Q536TQ8R MCM69Q536 MCM69Q536TQ10 MCM69Q536TQ1 |
32K x 36 Bit Synchronous Separate I/O SRAM
|
Motorola, Inc. MOTOROLA[Motorola, Inc]
|
MC74HC367A MC74HC367AD MC74HC367ADT MC74HC367AN ON |
Telecomm/Datacomm HC/UH SERIES, 6-BIT DRIVER, TRUE OUTPUT, PDSO16 From old datasheet system Hex 3-State Noninverting Buffer with Separate 2-Bit and 4-Bit Sections Hex 3-State NonInverting Buffer with Separate 2-Bit and 4-Bit Section High-Performance Silicon-Gate CMOS
|
Motorola Mobility Holdings, Inc. ONSEMI[ON Semiconductor]
|
R1Q5A3636BBG-60R R1Q5A3618BBG-60R |
36-Mbit DDRII SRAM 4-word Burst
|
Renesas Electronics Corporation http://
|
R1Q4A3636BBG-60R R1Q4A3618BBG-60R |
36-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation http://
|
K7K1618U2C K7K1636U2C |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
K7I321884C K7I323684C |
1Mx36 & 2Mx18 DDRII CIO b4 SRAM
|
Samsung semiconductor
|